Gopal Rawat

Designation: 

Assistant Professor Grade I

Date of Joining at NITK: 

Thursday, December 5, 2024

Professional Experience: 

6+ Years

Contact Details

E-mail: 

gopal.rawat@nitk.edu.in
Faculty (author) Identifiers

ORCID iD: 

https://orcid.org/0000-0001-6451-8165
Academic Background
  • Ph.D. (Micro/Nano-electronics Engineering): Indian Institute of Technology (BHU) Varanasi, India in 2018. 
  • M.Tech. (Microelectronics Engineering): Indian Institute of Technology (BHU) Varanasi, India in 2013.
  • B.Tech. (ECE): Uttarakhand Technical University, India in 2011.
Areas of Interest

Micro/Nano-electronics, Fabrication and Characterization, Semiconductor Devices, Flexible Electronics, Sensors, Solar Cells, Modeling and Simulation, Non-Conventional FET, Biosensors, Gas Sensors, Engineered Nanomaterials, VLSI, Photodetectors, Optoelectronics.

Significant Publications
Journals:
  1. V. Goel, Y. Kumar, G. Rawat, H. Kumar, “Self-Powered Photodetectors: A Device Engineering Perspective”, Nanoscale, Royal Society of Chemistry (RSC), Vol. 16, no. 19, pp. 9235-9258, 2024. DOI: https://doi.org/10.1039/D4NR00607K
  2. V. Kumar, R. K. Maurya, G. Rawat, R. G. Debnath, K. Mummaneni, “Noise Analysis of NC-GAAFET Cylindrical Nanowire with Non-Uniform Interface Trap Charge”, Physica Scripta, Vol. 99, no. 7, pp. 075048, 2024. DOI: http://dx.doi.org/10.1088/1402-4896/ad587d
  3. J. Talukdar, Malvika, B. Das, G. Rawat, K. Mummaneni, "Source Engineered TFET for Digital Inverters Application", Physica Scripta, Vol. 99, no. 4, pp. 045026, 2024. DOI: https://doi.org/10.1088/1402-4896/ad338b
  4. V. Kumar, R. K. Maurya, Malvika, G. Rawat, K. Mummaneni, “Performance optimization of High-K GAA-PZT Negative Capacitance FET MFIS Silicon Nanowire for Low Power RFIC and Analog Applications”, Physica Scripta, Vol. 98, pp. 115029, 2023. DOI: http://dx.doi.org/10.1088/1402-4896/acfffd
  5. J. Talukdar, G. Rawat, K. Mummaneni, “Highly Sensitivity Non-Uniform Tunnel FET based Biosensor using Source Engineering”, Materials Science in Semiconductor Processing, Vol. 293, pp. 116455, 2023. DOI: http://dx.doi.org/10.1016/j.mseb.2023.116455
  6. V. Kumar, R. K. Maurya, Malvika, G. Rawat, K. Mummaneni, “Negative Capacitance Gate-All-Around PZT Silicon Nanowire with High-K/Metal Gate MFIS Structure for Low SS and High Ion/Ioff”, Semiconductor Science and Technology, Vol. 38, pp. 055018, 2023. DOI: http://dx.doi.org/10.1088/1361-6641/acc6e7
  7. C. Dubey, D. K. Jarwal, H. Kumar, Y. Kumar, K. Mummaneni, G. Rawat, “Development of Highly Efficient ZnO Nanorods based Non Toxic Perovskite Solar Cell using AZO Buffer Layer and Lanthanide Doping”, IEEE Transactions on Electron Devices, Vol. 69, no. 2, pp. 622-630, 2022. DOI: http://dx.doi.org/10.1109/TED.2021.3138375
  8. D. K. Jarwal, C. Dubey, K. Baral, A. Bera, G. Rawat, “Comparative Analysis and Performance Optimization of Low-Cost Solution-Processed Hybrid Perovskite-Based Solar Cells with Different Organic HTLs”, IEEE Transactions on Electron Devices, Vol. 69, no. 9, pp. 5012-5020, 2022. DOI: http://dx.doi.org/10.1109/TED.2022.3194106
  9. D. K. Jarwal, A. K. Mishra, K. Baral, A. Kumar, C. Kumar, G. Rawat, B. Mukherjee, S. Jit, “Performance Optimization of ZnO Nanorods ETL Based Hybrid Perovskite Solar Cells with Different Seed Layers”, IEEE Transactions on Electron Devices, Vol. 69, no. 5, pp. 2494-2499, 2022. DOI: http://dx.doi.org/10.1109/TED.2022.3162552
  10. V. Sharma, S. Kumar, J. Talukdar, K. Mummaneni, G. Rawat, “Source Pocket-Engineered Hetero-Gate Dielectric SOI Tunnel FET with Improved Performance”, Materials Science in Semiconductor Processing, Vol. 143, pp. 106541, 2022. DOI:http://dx.doi.org/10.1016/j.mssp.2022.106541
  11. J. Talukdar, G. Rawat, K. Mummaneni, “Analytical Modeling and TCAD Simulation for Subthreshold Characteristics of Asymmetric Tunnel FET”, Materials Science in Semiconductor Processing, Vol. 142, pp. 106482, 2022. DOI: http://dx.doi.org/10.1016/j.mssp.2022.106482
  12. A. B. Yadav, G. Rawat, B. S. Sannakashappanavar, “A Low-Cost Tin (Sn) Doped ZnO Thin Films Based Schottky Diode for UV Detection”, Vol. 31, pp. 103751, Materials Today Communications, 2022. DOI: http://dx.doi.org/10.1016/j.mtcomm.2022.103751
  13. J. Talukdar, G. Rawat, K. Mummaneni, “Noise behaviour and Reliability Analysis of Non-Uniform Body Tunnel FET with Dual Material Source”, Microelectronics Reliability, Vol. 131, pp. 114510, 2022. DOI: http://dx.doi.org/10.1016/j.microrel.2022.114510
  14. S. M. Yadav, A. Chaurasia, G. Rawat, A. Pandey, "CTS Quantum Dots-ZnO Nanocomposites for Broadband Photodetection", ACS Applied Electronic Materials, Vol. 3, no. 9, pp. 4018–4026, 2021. DOI: http://dx.doi.org/10.1021/acsaelm.1c00545
  15. J. Talukdar, G. Rawat, K. Mummaneni, "Dielectrically Modulated Single and Double Gate Tunnel FET Based Biosensors for Enhanced Sensitivity", IEEE Sensors Journal, Vol. 21, no. 23, pp. 26566 - 26573, 2021. DOI: http://dx.doi.org/10.1109/JSEN.2021.3122582
  16. H. Bisht, G. Rawat, S. Jit, H. Mishra, “Excitation Energy Transfer/Migration between Tris-(8-hydroxyquinoline) Aluminium and Poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] in Chloroform”, The Journal of Physical Chemistry C, ACS Publications, Vol. 124, no. 12, pp.6486–6494, 2020. DOI: http://dx.doi.org/10.1021/acs.jpcc.9b10453
  17. J. Talukdar, G. Rawat, K. Singh, K. Mummaneni, “Comparative analysis of effect of trap charges on single and double gate extended source Tunnel FET with δp + SiGe pocket layer”, Journal of Electronic Materials, Vol.49, no. 7, pp. 4333–4342, 2020. DOI:http://dx.doi.org/10.1007/s11664-020-08151-5
  18. J. Talukdar, G. Rawat, K. Singh, K. Mummaneni, “Low Frequency Noise Analysis of Single Gate Extended Source Tunnel FET”, Vol. 13, pp. 3971–3980 Silicon, 2020.  DOI:http://dx.doi.org/10.1007/s12633-020-00712-x
  19. J. Talukdar, G. Rawat, B. Choudhuri, K. Singh, K. Mummaneni, “Device Physics Based Analytical Modeling for Electrical Characteristics of Single Gate Extended Source Tunnel FET (SG-ESTFET)”, Superlattices and Microstructures, Vol. 148, pp. 106725, 2020. DOI: http://dx.doi.org/10.1016/j.spmi.2020.106725
  20. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Effects of Optical Resonance on the Performance of Metal (Pd, Au)/CdSe Quantum Dots (QDs)/ ZnO QDs Optical Cavity Based Spectrum Selective Photodiodes”, IEEE Transactions on Nanotechnology, Vol. 18, pp. 365 - 373, 2019. DOI: https://doi.org/10.1109/TNANO.2019.2907529
  21. J. Talukdar, G. Rawat, K. Mummaneni, “A Novel Extended Source TFET with δp + -SiGe layer”, Silicon, Vol. 33, pp. 1-9, 2019. DOI: http://dx.doi.org/10.1007/s12633-019-00321-3
  22. S. K. Yadav, G. Rawat, S. Pokharia, S. Jit, H. Mishra, “Excited-State Dynamics of Quinine Sulfate and Its Di-Cation Doped in Polyvinyl Alcohol Thin Films Near Silver Nanostructure Islands” ACS Omega, Vol. 4, no. 3, pp. 5509–5516, 2019. DOI: https://doi.org/10.1021/acsomega.9b00009
  23. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, R. Prakash, S. Jit, “Electrical and Optical Characteristics of PQT-12 Based Organic TFTs Fabricated by Floating-Film Transfer Method”, IEEE Transactions on Nanotechnology, Vol. 17, no. 6, pp. 1111-1117, 2018. DOI: http://dx.doi.org/10.1109/tnano.2018.2846230
  24. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, A. Kumar, R. Prakash, S. Jit, “Electrical and Ammonia Gas Sensing Properties of PQT-12/CdSe Quantum Dots Composite Based Organic Thin Film Transistors”, IEEE Sensors Journal, Vol. 18, no. 15, pp. 6085 - 6091, 2018. DOI: http://dx.doi.org/10.1109/jsen.2018.2845873
  25. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Spectrum Selectivity and Responsivity of ZnO Nanoparticles Coated Ag/ZnO QDs/Ag UV photodetectors”, IEEE Photonics Technology Letters, Vol. 30, no. 12, pp. 1147-1150, 2018. DOI:https://doi.org/10.1109/LPT.2018.2836978
  26. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Poly (3, 3’’’-dialkylquaterthiophene) Based Flexible Nitrogen Dioxide Gas Sensor”, IEEE Sensors Letters, Vol. 2, no. 1, pp. 1-4, 2018. DOI: http://dx.doi.org/10.1109/lsens.2018.2799851
  27. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, R. Prakash, S. Jit, “Flexible poly (3, 3'''- dialkylquaterthiophene) based interdigitated metal-semiconductor-metal ammonia gas sensor”, Sensors & Actuators: B. Chemical, Vol. 255, Part 1, pp. 203-209, 2018. DOI: https://doi.org/10.1016/j.snb.2017.08.014
  28. Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Visible-blind Au/ZnO Quantum dots based Highly Sensitive and Spectrum Selective Schottky Photodiode”, IEEE Transactions on Electron Devices, Vol. 64, no. 7, pp. 2874 - 2880, 2017. DOI: https://doi.org/10.1109/TED.2017.2705067
  29. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Electrical and Optical Characteristics of Self-Powered Colloidal CdSe Quantum Dot-Based Photodiode”, IEEE Journal of Quantum Electronics, Vol. 53, no. 3, pp. 1–8, 2017. DOI: https://doi.org/10.1109/JQE.2017.2696487
  30. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, A. Sharma, B. N. Pal, S. Jit, "Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors" IEEE Photonics Technology Letters, Vol. 29, no. 4, pp. 361 - 364, 2017. DOI: https://doi.org/10.1109/LPT.2016.2647321
  31. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. Mukherjee, B. N. Pal, S. Jit, “Colloidal CdSe Quantum Dots and PQT-12 Based Low-Temperature Self-Powered Hybrid Photodetector”, IEEE Photonics Technology Letters, Vol. 29, no. 20, pp. 1715 - 1718, 2017. DOI: http://dx.doi.org/10.1109/lpt.2017.2746664.
  32. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. Mukherjee, B. N. Pal, S. Jit, “Heating Effects of Colloidal ZnO Quantum Dots (QDs) on ZnO QD/CdSe QD/MoOx Photodetectors”, IEEE Transactions on Nanotechnology, Vol. 16, no. 6, pp. 1073-1080,2017. DOI: https://doi.org/10.1109/TNANO.2017.2761785
  33. G. Rawat, H. Kumar, Y. Kumar, C. Kumar, D. Somvanshi, S. Jit, “Effective Richardson Constant of Sol-Gel Derived TiO 2 Films in n-TiO 2 /p-Si Heterojunctions”, IEEE Electron Device Letters, Vol. 38, no. 5, pp. 633 - 636, 2017. DOI: https://doi.org/10.1109/LED.2017.2687820
  34. G. Rawat, D. Somvanshi, Y. Kumar, H. Kumar, C. Kumar, S. Jit, “Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO 2 Capped p-Si Nanowires Heterojunction Photodiodes”, IEEE Transactions on Nanotechnology, Vol. 16, no. 1, pp. 49 - 57, 2017. DOI: http://dx.doi.org/10.1109/tnano.2016.2626795
  35. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. Mukherjee, B. N. Pal, S. Jit, “Electrical and Optical Characteristics of Solution processed MoOx and ZnO QDs Heterojunction”, MRS Communications, Vol. 7, no. 3, pp. 607-612, 2017. DOI: http://dx.doi.org/10.1557/mrc.2017.68
  36. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, R. Prakash, and S. Jit, “Electrical and Ammonia Gas Sensing Properties of Poly (3, 3’’’-dialkylquaterthiophene) Based Organic Thin Film Transistors Fabricated by Floating-Film Transfer Method”, Organic Electronics, Vol. 48, pp. 53 – 60, 2017. DOI: https://doi.org/10.1016/j.orgel.2017.05.040 
  37. S. Singh, P. K. Tiwari, H. Kumar, Y. Kumar, G. Rawat, S. Kumar, K. Singh, E. Goel, S. Jit, Si-Hyun Park, “Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes”, Nano, Vol. 12, no. 11, pp. 1750137, 2017. DOI: http://dx.doi.org/10.1142/s1793292017501375
  38. H. Kumar, Y. Kumar, K. Singh, S. Kumar, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Kink Effect in TiO 2 Embedded ZnO Quantum Dot based Thin Film Transistors”, Electronics Letters, Vol. 53, no. 4, pp. 262 – 264, 2017. DOI: https://doi.org/10.1049/el.2016.3595
  39. G. Rawat, D. Somvanshi, H. Kumar, Y. Kumar, C. Kumar, S. Jit, “Ultraviolet Detection Properties of p-Si/n-TiO 2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol-Gel Methods: A Comparative Study”, IEEE Transactions on Nanotechnology, Vol. 15, no. 2, pp. 193 – 200, 2016. DOI: https://doi.org/10.1109/TNANO.2015.2512565
  40. G. Rawat, S. Kumar, E. Goel, M. Kumar, S. Dubey, S. Jit, “Analytical Modeling of Subthreshold Current and Subthreshold Swing of Gaussian-Doped (GD) Strained-Si-on-Insulator (SSOI) MOSFETs”, Journal of Semiconductors, Vol. 35, no. 8, pp. 084001-8,2014. DOI: http://dx.doi.org/10.1088/1674-4926/35/8/084001
  41. G. Rawat, E. Goel, S. Kumar, M. Kumar, S. Dubey, S. Jit, “Analytical Modeling of Threshold Voltage of Ion-Implanted Strained-Si-on-Insulator (SSOI) MOSFETs”, Journal of Nanoelectronics and Optoelectronics, Vol. 9, no. 3, pp. 442-448, 2014. DOI: http://dx.doi.org/10.1166/jno.2014.1597.
Conferences/ Proceedings:
  1. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, R. Prakash, S. Jit, “Photoresponse in Poly (3, 3"3;-dialkylquarterthiophene) Based Metal-Semiconductor-Metal Structure”, in Optics"; Photonics Taiwan, the International Conference (OPTIC 2016), held in Taipei, Taiwan during December 3-5, 2016. 
  2. A. Sharma, C. Dubey, D. K. Jarwal, G. Rawat, “Computational Approaches to Optimizing Perovskite Solar Cell Performance” 9 th International Conference on Signal Processing and Communication (ICSC), held on 21-23 December 2023, at NOIDA, India, 2023. Publisher: IEEE
  3. T. Kumar, Y. Kumar, H. Kumar, V. Goel, G. Rawat, “Temperature Dependent Analysis of ZnO Qd Photodetectors” 9 th International Conference on Signal Processing and Communication (ICSC), held on 21-23 December 2023, at NOIDA, India, 2023. Publisher:  IEEE
  4. P. Kumar, J. K. Ratan, N. Divya, K. Mummaneni, G. Rawat, “Investigation of CeO2/rGO Nanocomposites as Diesel Additives to Enhance Engine Performance and Reduce Exhaust Emissions” 9 th International Conference on Signal Processing and Communication (ICSC), held on 21-23 December 2023, at NOIDA, India, 2023. Publisher: IEEE
  5. Malvika, J. Talukdar, B. Choudhuri, G. Rawat, K. Mummaneni, “Exploration of Graphene as Emerging 2D Material and its Applications: A Review”, 4 th International Conference on Frontiers in Computing and Systems (COMSYS-2023), Organised by IIT Mandi and COMSYS Educational Trust, Kolkata during, 16th-17th October 2023. Publisher: Springer.
  6. U. Chaudhary, C. Dubey, G. Rawat, “Numerical Simulation of Inverted Hybrid Perovskite Solar Cell”, IEEE International Conference on Computer, Electronics & Electrical Engineering and their applications (IC2E3), held on June 8th- 9th, 2023, at NIT Uttarakhand, India, 2023. Publisher: IEEE.
  7. D. K. Jarwal, R. Kumar, S. K. Satapathy, A. Kumar, G. Rawat, “Performance Optimization of Low-Cost Hybrid Perovskite Solar Cells Using Thickness Variation of Perovskite and Transport Layers”, 6 th IEEE International Conference on Emerging Electronics (ICEE), held  at Bangalore, India, from 11 th –14 th Dec. 2022.
  8. S. Rawat, D. Kashyap, A. Kumar, G. Rawat, “Comparative Analysis of Various Classification Models on Disease Symptom Prediction Dataset”, 3 rd IEEE International Conference on Innovations in Power and Advanced Computing Technologies”, i-PACT-2021, held from 27 th to 29 th November 2021. Publisher: IEEE.
  9. Y. Kumar, H. Kumar, G. Rawat, B. N. Pal, S. Jit, “Mg Doping Effects on Optical and Electrical Properties of Solution-Processed ZnO Quantum Dots Based Thin Film Devices”, 6 th International Conference on Signal Processing and Communication (ICSC 2020), held at Jaypee Institute of Information Technology, Noida (INDIA) during 5 th –7 th March, 2020. Publisher: IEEE.
  10. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Electrical and Optical characteristics of MoOx/ZnO Based thin film Photodetector”, 5 th International Conference on Signal Processing and Communication (ICSC-2019), held at Jaypee Institute of Information Technology, Noida (INDIA) during March 7 th -9 th , 2019. Publisher: IEEE.
  11. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, A. K. Mishra, R. Prakash, S. Jit, “Poly (3, 3’’’-dialkylquaterthiophene)/ZnO Quantum Dots Based Hybrid p-n Junction Diode”, 3 rd International Conference on Microwave and Photonics (ICMAP 2018), held at IIT (ISM), Dhanbad, Jharkhand, India, 9 - 11 February, 2018. Publisher: IEEE.
  12. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, V. Goel, B. N. Pal, S. Jit, “Fabrication and Characterization of Photo junction Field Effect Transistor”, International Conference on Signal Processing and Communication (ICSC-2018), March 21 st -23 rd , To be held at JIIT Nodia, Uttar Pradesh, India, 2018. Publisher: Springer.
  13. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, D. K. Jarwal, R. Prakash, S. Jit, “Fabrication and Electrical Characterizations of Poly (3,3‴-dialkylquarterthiophene) Based Flexible Schottky Diode”, Nanotechnology for Instrumentation and Measurement Workshop III rd International Conference (NANOfIM 2017), held at Gautam Buddha University, Greater Noida, India, November 16-17, 2017. Publisher: IEEE.
  14. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, R. Prakash and S. Jit, “Poly (3, 3'''- dialkylquaterthiophene) Based Organic Thin Film Transistor Under Green Light Illumination”, 12 th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), held in Singapore on 2 nd –4 th October 2017. Publisher: IEEE.
  15. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. Mukherjee, B. N. Pal, S. Jit, “Solution processed MoO 2 and ZnO Heterojunction Electrical and Optical Characteristics”, Materials Research Society (MRS) Spring Meeting & Exhibit, held in Phoenix, Arizona, U.S.A, April 17-21, 2017.
  16. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, B. Mukherjee, B. N. Pal, S. Jit, “Mg Doping Effects on Optical and Electrical Properties of Solution-Processed ZnO Quantum Dots Based Thin Film Devices”, Materials Research Society (MRS) Spring Meeting & Exhibit, held in Phoenix, Arizona, U.S.A, April 17-21, 2017.
  17. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Effect of Electrode on Spectrum Selectivity and Photoresponse of the Colloidal-QD Based Schottky Photodiode”, Materials Research Society-2017 (MRS) Fall Meeting, held at the Hynes Convention Center and Sheraton Boston Hotel in Boston, Massachusetts, USA during November 26-December 1, 2017.
  18. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Optical Characteristics of Solution Processed MoO 2 /ZnO Quantum Dots based Thin Film Transitor”, IEEE International Symposium on Nanoelectronic and Information Systems (IEEE-iNIS) held at ABV-IIITM, Gwalior, India, pp. 19-21, Dec. 2016. Publisher: IEEE
  19. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Electrical and optical characteristics of Pd/ZnO Quantum dots based Schottky Photodiode on n-Si”, IEEE International Symposium on Nanoelectronic and Information Systems (IEEE-iNIS), held at ABV-IIITM, Gwalior, India, pp. 214-217, Dec. 2016. Publisher: IEEE
  20. H. Kumar, Y. Kumar, G. Rawat, C. Kumar, B. N. Pal, S. Jit, “Electrical and Optical Characteristics of CdSe Quantum Dot based Schottky Diode”, 11 th International Conference on Industrial and Information Systems (ICIIS 2016), held at IIT Roorkee, India, pp. 774–777 Dec. 2016. Publisher: IEEE
  21. G. Rawat, H. Kumar, Y. Kumar, C. Kumar, D. Somvanshi, S. Jit, “Structural and Optical Characteristics of n-TiO 2 Thin Films by Sol-Gel Method”, 12 th IEEE India International Conference, (INDICON 2015), held at Jamia Millia Islamia, New Delhi, India, pp. 1-4, Dec. 2015. Publisher: IEEE
  22. H. Kumar, Y. Kumar, G. Rawat, K. Singh, B. N. Pal, S. Jit,” Ultra-Violet Detection Characteristics of MoO 2 /ZnO based Thin Film Sensor Grown on Al 2 O 3 /p-Si Substrates”, 4 th International Conference On Current Developments In Atomic, Molecular Optical And Nano Physics With Applications (CDAMOP-2015), Delhi, 2015.
  23. Y. Kumar, H. Kumar, G. Rawat, K. Singh, B. N. Pal, S. Jit,” Optical Characterization of Sol-Gel deposited Zinc Oxide Thin Film”, 4 th International Conference On Current Developments In Atomic, Molecular Optical And Nano Physics With Applications (CDAMOP-2015), Delhi, 2015.
  24. G. Rawat, S. Kumar, E. Goel, M. Kumar, S. Dubey, S. Jit, “An Analytical Study of Gaussian Doped Strained-Si on SOI MOSFETs for Optimizing Off-State Current”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18 th -20 th Nov., 2013.
  25. G. Rawat, M. Kumar, S. Dubey, S. Jit, “An Analytical Study of Ion Implanted Strained-Si on SOI MOSFETs for Optimizing Switching Characteristics”, 17 th International Workshop on the Physics of Semiconductor Devices (IWPSD), held at Amity University, Noida, India, pp. 203-206, 10 th -14 th Dec. 2013. Publisher: Springer
  26. E. Goel, S. Kumar, G. Rawat, M. Kumar, S. Dubey, S. Jit, “Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs”, 17 th International Workshop on the Physics of Semiconductor Devices (IWPSD), held at Amity University, Noida, India, pp. 193-196, 10 th -14 th Dec. 2013. Publisher: Springer
  27. S. Kumar, E. Goel, G. Rawat, M. Kumar, S. Dubey, S. Jit, “Threshold Voltage Modeling of Short-Channel DG MOSFETs with Non-Uniform Doping in the Vertical Direction”, 17 th International Workshop on the Physics of Semiconductor Devices (IWPSD), held at Amity University, Noida, India, pp. 263-266, 10 th -14 th Dec. 2013. Publisher: Springer
  28. S. Kumar, E. Goel, G. Rawat, K. Singh, M. Kumar, S. Dubey, S. Jit, “Surface Potential Based Subthreshold Swing Modeling of Symmetric Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile”, International Conference on Nanoscience Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow,India, 18 th -20 th November, 2013.
  29. E. Goel, S. Kumar, G. Rawat, M. Kumar, S. Dubey and S. Jit, “An Analytical Model for Threshold Voltage Roll-off of Short-Channel DG MOSFETs with High-k Gate Stack”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18 th -20 th November, 2013.
  30. E. Goel, G. Rawat, S. Kumar, M. Kumar, S. Dubey and S. Jit, “Surface Potential Based Subthreshold Current Model of High-k Gate Stack Double-Gate (DG) MOSFETs”, International Conference on Nanotechnology (ICNT - 2013), held at HIT, Haldia, West Bengal, India, 25 th -26 th October, 2013.
  31. S. Kumar, E. Goel, G. Rawat, M. Kumar, S. Dubey and S. Jit, “Analytical Modeling of Subthreshold Swing Based on Surface Potential of Non-Uniformly Doped Double-Gate (DG) MOSFETs”, International Conference on Nanotechnology (ICNT – 2013), held at HIT, Haldia, West Bengal, India, 25 th -26 th October, 2013.
 

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