EC301N VLSI Design

Course Name: 

EC301N VLSI Design

Programme: 

B.Tech (ECE)

Semester: 

Fifth

Category: 

Programme Core (PC)

Credits (L-T-P): 

(2-1-0) 3

Content: 

MOS theory – input, output characteristics of NMOS & PMOS, second order effects. NMOS inverter withresistive load, enhancement NMOS load, depletion NMOS load, Pseudo-NMOS load. CMOS inverter,MOSFET modeling – GATE capacitances, SPICE parameters. CMOS fabrication process overview of N-well, twin-well, silicon on insulator processing technology. Spice simulation of logic gates and analysis,Layout & design rules, Latch-up, NMOS, CMOS logic gates – combinational logic circuits.. CMOSsequential logic circuits. Pass transistor logic & Transmission gates. Introduction to CAD tools – (Demo onMagic), Extraction, Circuit elements resistance, capacitance estimation. Switching characteristics. DelayModels, power dissipation, Interconnect delay, Timing analysis, charge sharing, scaling of MOS transistordimensions, Pseudo-NMOS logic, Dynamic logic, Domino Logic, Clocked systems, Latches, Flipflops,Memory Architecture, ROMs, SRAM, DRAM memory elements, address decoders., System levelperspective, switch level simulation (IRSIM), LVS using Netgen

References: 

Digital Integrated Circuits: A design perspective, (2 nd Edition), Jan M Rabaey, A Chandrakasan, B Nikolic,Pearson Education 2002.
CMOS Digital Integrated Circuits (3 rd ed.), Kang & Leblebici, Tata McGraw – Hill.
Principles of CMOS VLSI Design - A system perspective, (2 nd Edition) Neil H.E Weste and Kamran Eshraghian, Pearson Education

Department: 

Electronics and Communication Engineering(ECE)
 

Contact us

Prof. Ramesh Kini M.
Professor and Head,
Department of ECE, NITK, Surathkal,
P. O. Srinivasnagar,
Mangalore - 575 025 Karnataka, India.

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